SIHA125N60EF-GE3

Single FETs, MOSFETs Overview

The SiHA125N60EF-GE3 is a single N-channel MOSFET from the EF Series, utilizing Vishay's fourth-generation E series technology. It features a Thin-Lead TO-220 FULLPAK package and operates with a drain-source voltage of 600 V. The device provides a continuous drain current of 11 A at 25 °C case temperature and exhibits a maximum on-state resistance of 0.125 Ω at VGS = 10 V. Key electrical parameters include a total gate charge of 47 nC maximum, a threshold voltage range of 3.0 to 5.0 V, and a power dissipation capacity of 179 W. It supports an operating junction temperature up to +150 °C.

Single FETs, MOSFETs Feature Summary

• Fourth-generation E series technology designed for low figure-of-merit Ron x Qg
• Integrated fast body diode with reduced switching and conduction losses
• Rated for unclamped inductive switching (UIS) avalanche energy
• Low effective capacitance Co(er) optimized for high-frequency performance

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge (HID) lighting
• Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm RoHS compliance status through the provided documentation links. Ensure thermal management design accounts for the specified junction-to-case resistance ratings during operation. Validate that the application environment remains within the stated -55 °C to +150 °C operating temperature limits.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust avalanche energy handling capabilities alongside efficient switching performance. The thin-lead TO-220 FULLPAK package offers a balance between thermal dissipation and mounting flexibility compared to standard packages. Consider the specific gate charge requirements relative to the driving circuitry to ensure optimal turn-on and turn-off speeds without excessive drive current demands.

Single FETs, MOSFETs Part Context

This part belongs to the SiHA EF Series, which integrates fast body diodes into Vishay's TrenchFET technology platform. The series targets applications demanding high reliability and efficiency in power conversion stages. The specific model designation indicates its placement within the broader portfolio of silicon-based N-channel enhancement mode field-effect transistors manufactured by Vishay Siliconix.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 600 V rating, TO-220 FULLPAK footprint, and comparable RDS(on) and Qg values. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with other EF Series variants or equivalent Vishay models ensuring identical package dimensions and lead configurations.