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SIHB12N60ET1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 600V 12A TO263. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIHB12N60ET1-GE3
- Description：MOSFET N-CH 600V 12A TO263
- Series：E
- Mfr：Vishay Siliconix
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：58 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：937 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：147W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for SIHB12N60ET1-GE3
Single FETs, MOSFETs Overview
The SIHB12N60ET1-GE3 is a single N-channel Power MOSFET manufactured by Vishay Siliconix. It utilizes silicon technology and is housed in a D2PAK-3 (TO-263-3) surface-mount package. The device features a drain-source breakdown voltage of 650 V and supports a continuous drain current of 12 A. Its maximum on-resistance is specified at 380 mΩ, with a gate-source voltage rating of ±30 V. Key switching parameters include a gate charge of 29 nC and a threshold voltage of 4 V.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with a 650 V drain-source breakdown rating for robust operation in power circuits.
- Surface-mount construction in a D2PAK-3 package designed for automated assembly and thermal management.
- Enhancement-mode operation controlled by standard gate drive voltages within the ±30 V limit.
Single FETs, MOSFETs Applications
- General-purpose power switching applications
- DC-DC converter circuits
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet version to confirm exact electrical limits and thermal characteristics. Ensure the ordering part number matches the required suffix for packaging configuration. Cross-reference pinout diagrams with target PCB footprints to prevent installation errors during assembly.
Single FETs, MOSFETs Selection Notes
Select this component when a 650 V rating is required alongside moderate current handling capabilities. The D2PAK-3 package offers a balance between current capacity and board space efficiency compared to through-hole alternatives. Evaluate thermal resistance requirements against the expected power dissipation levels in the final design.
Single FETs, MOSFETs Part Context
This device belongs to the Vishay Siliconix family of high-voltage N-channel MOSFETs. These components are engineered for general-purpose power switching tasks requiring reliable performance under high voltage stress. The product line emphasizes standardized packaging solutions suitable for modern surface-mount manufacturing processes.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for compatible parts with matching voltage and current ratings. Verify that alternative packages maintain similar thermal performance and pin configurations to ensure seamless integration without circuit redesign.
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