SIHD1K4N60E-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHD1K4N60E-GE3 is a single N-channel Power MOSFET utilizing fourth-generation E series technology. It features a 600 V drain-source voltage rating and a maximum continuous drain current of 4.2 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 1.3 Ω and a maximum gate charge of 7.5 nC. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a DPAK (TO-252) surface-mount package.

Single FETs, MOSFETs Feature Summary

• Fourth-generation E series technology providing low figure-of-merit and reduced switching losses
• Rated for unclamped inductive switching (UIS) avalanche energy
• Low effective capacitance to minimize conduction and switching losses

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge lighting
• Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and document number against official Vishay records before implementation. Confirm that the lead-free and halogen-free material categorization aligns with project compliance requirements. Ensure thermal management design accounts for the specified linear derating factor and junction-to-case thermal resistance limits under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with moderate current handling is required for surface-mount designs. The DPAK package suits applications where space constraints exist but higher thermal dissipation than smaller packages is needed. Evaluate the trade-off between the relatively high on-resistance and the low gate charge for efficiency optimization in switching circuits.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series, which focuses on optimizing the figure-of-merit for power loss reduction. The SIHD1K4N60E variant specifically targets applications requiring robust performance in high-voltage environments while maintaining compatibility with standard surface-mount assembly processes used in modern electronic manufacturing.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified cross-reference part numbers. Do not substitute based solely on matching electrical parameters without confirming pinout compatibility and thermal characteristics.