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SIHF22N65E-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 650V 22A TO220. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIHF22N65E-GE3
- Description：MOSFET N-CH 650V 22A TO220
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2415 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：35W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220 Full Pack
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for SIHF22N65E-GE3
Single FETs, MOSFETs Overview
The Vishay Siliconix SIHF22N65E-GE3 is a single N-channel power MOSFET from the E Series, housed in a TO-220 FULLPAK package. It features a drain-source voltage of 650 V and a continuous drain current of 22 A at 25 °C case temperature. The maximum on-state resistance is 0.18 Ω at VGS = 10 V. Total gate charge reaches 110 nC maximum. The device supports an operating junction temperature range from -55 °C to +150 °C with a maximum power dissipation of 35 W.
Single FETs, MOSFETs Feature Summary
- Optimized for low figure-of-merit combining on-resistance and gate charge
- Features ultra-low gate charge to reduce switching losses
- Rated for unclamped inductive switching (UIS) avalanche energy
- Designed with low input capacitance for improved efficiency
Single FETs, MOSFETs Applications
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- High-intensity discharge lighting
- Industrial motor drives and welding equipment
Single FETs, MOSFETs Procurement Notes
Verify component authenticity by checking markings against official datasheet specifications. Confirm RoHS compliance status via manufacturer documentation. Validate package dimensions match TO-220 FULLPAK standards. Ensure thermal management design accounts for specified junction-to-case resistance ratings during operation.
Single FETs, MOSFETs Selection Notes
Select this component for high-voltage applications requiring robust avalanche capability. Evaluate thermal performance based on the 35 W power dissipation limit. Consider the 0.18 Ω on-resistance for conduction loss calculations. Verify gate drive requirements align with the 110 nC total gate charge specification for optimal switching speed.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix E Series Power MOSFET lineup. It utilizes silicon technology for high-voltage switching. The TO-220 FULLPAK package provides through-hole mounting capabilities. The product line emphasizes reduced switching and conduction losses for efficient power conversion designs.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage and on-resistance before substitution. Ensure pinout compatibility matches the original TO-220 FULLPAK configuration.
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