SIHG17N80AEF-GE3

$3.56

Description：E SERIES POWER MOSFET WITH FAST
Series：EF
Mfr：Vishay Siliconix
Package：Tube

SKU:8ba6d4b4c62d Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIHG17N80AEF-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is E SERIES POWER MOSFET WITH FAST. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHG17N80AEF-GE3

Description：E SERIES POWER MOSFET WITH FAST
Series：EF
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：305mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：179W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AC
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for SIHG17N80AEF-GE3

SIHG17N80AEF-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHG17N80AEF-GE3 is a single N-channel enhancement mode power MOSFET from the EF Series, housed in a TO-247AC package. It features an 800 V drain-source voltage rating and a continuous drain current of 15 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.305 Ω at VGS = 10 V and ID = 8.5 A. Key dynamic parameters include a total gate charge of 63 nC maximum, a turn-on delay time of 32 ns, and a fall time of 76 ns. It supports a maximum power dissipation of 179 W and operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Low figure-of-merit (FOM) Ron x Qg for reduced switching and conduction losses
Low effective capacitance (Co(er))
Avalanche energy rated (UIS)

Single FETs, MOSFETs Applications

Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
High-intensity discharge (HID) lighting
Industrial welding and induction heating

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet documentation. Confirm that the ordering suffix matches the specified lead finish and halogen-free requirements. Ensure the physical package dimensions align with the provided JEDEC TO-247AC outline specifications before integration into the design.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust avalanche capability and low switching losses. Evaluate thermal management requirements based on the 179 W maximum power dissipation and linear derating factor. Consider the gate charge characteristics when designing drive circuits to optimize switching performance and minimize driver power consumption.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix EF Series of Power MOSFETs featuring fast body diodes. It utilizes TrenchFET technology to achieve low on-resistance and improved switching efficiency compared to standard planar devices. The TO-247AC package provides a reliable through-hole mounting solution suitable for industrial and commercial power conversion systems.