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SIHG22N50D-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 22A TO247AC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIHG22N50D-E3
- Description：MOSFET N-CH 500V 22A TO247AC
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：230mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1938 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：312W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247AC
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for SIHG22N50D-E3
Single FETs, MOSFETs Overview
The Vishay Siliconix SIHG22N50D-E3 is a single N-Channel Power MOSFET from the D Series, housed in a TO-247AC package. It features a drain-source voltage of 500 V and a continuous drain current of 22 A at 25 °C case temperature. The maximum on-state resistance is 0.230 Ω at VGS = 10 V. Total gate charge reaches 98 nC, with turn-on delay time up to 42 ns and fall time up to 80 ns. Maximum power dissipation is 312 W, operating within a junction temperature range of -55 to +150 °C.
Single FETs, MOSFETs Feature Summary
- Optimized design for low area specific on-resistance and reduced capacitive switching losses
- High body diode ruggedness rated for avalanche energy applications
- Fast switching characteristics combined with simple gate drive circuitry requirements
Single FETs, MOSFETs Applications
- Server and telecom power supplies (SMPS)
- Industrial welding and induction heating systems
- Motor drives
- Battery chargers
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for lead-free versus halogen-free variants based on project specifications. Validate datasheet revision against manufacturing date codes to ensure accurate electrical parameters are applied during design integration.
Single FETs, MOSFETs Selection Notes
Evaluate thermal management requirements carefully as the device supports high power dissipation. Ensure gate drive voltages align with the specified 10 V threshold for optimal on-resistance performance. Consider the TO-247AC footprint constraints and verify that the application environment stays within the specified -55 to +150 °C operating temperature limits.
Single FETs, MOSFETs Part Context
This component belongs to the Vishay Siliconix D Series Power MOSFET lineup, designed for high-efficiency power conversion. It utilizes planar cell technology to minimize conduction losses while maintaining robust switching capabilities. The series targets demanding industrial and consumer electronics applications requiring reliable high-voltage switching.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other Vishay D Series parts like SIHG22N60E-E3 for higher voltage ratings. Verify pinout compatibility and thermal resistance values when substituting similar TO-247AC packages from different manufacturers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
