SIHK125N65E-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHK125N65E-T1-GE3 is a single N-channel Power MOSFET from the E Series, utilizing 4th generation technology. It features a PowerPAK 10 x 12 surface-mount package with a drain tab and Kelvin source connection. Key electrical parameters include a 650 V drain-source voltage (VDS), a continuous drain current (ID) of 25 A at 25 °C case temperature, and a typical on-state resistance (RDS(on)) of 0.106 Ω at VGS = 10 V. The device has a maximum gate charge (Qg) of 57 nC and supports an operating junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Kelvin source connection for reduced gate noise
• Avalanche energy rated (UIS)
• Low figure-of-merit (FOM) Ron x Qg
• Reduced switching and conduction losses

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Industrial motor drives
• Solar PV inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T1-GE3 against official documentation to confirm lead-free and halogen-free compliance status. Ensure that the PowerPAK 10 x 12 land pattern matches the recommended layout provided in datasheet document number 92489. Confirm thermal management requirements align with the specified junction-to-case thermal resistance ratings for your application environment.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage isolation and low switching losses are required in compact designs. The Kelvin connection improves switching performance by isolating the driver ground from the source current path. Consider the 650 V rating for robustness against voltage transients in inductive loads. Evaluate the thermal dissipation capabilities relative to the 174 W maximum power dissipation rating under appropriate cooling conditions.

Single FETs, MOSFETs Part Context

This part belongs to Vishay's E Series of Power MOSFETs, which emphasizes efficiency through low figures of merit. The SIHK series specifically targets high-performance applications requiring fast switching speeds and high reliability. The PowerPAK 10 x 12 package offers improved thermal performance compared to traditional packages while maintaining a small footprint suitable for dense PCB layouts.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay substitution guides or datasheets for verified equivalents. Cross-referencing should focus on matching VDS, RDS(on), package type, and thermal characteristics. Do not assume functional interchangeability based solely on pinout compatibility without verifying electrical specifications.