SIHP16N50C-BE3

Single FETs, MOSFETs Overview

The SIHP16N50C-BE3 is a single N-channel power MOSFET manufactured by Vishay Siliconix. It utilizes silicon planar cell technology and is housed in a TO-220AB package with three leads. The device features a drain-source breakdown voltage of 500 V and supports a continuous drain current of 16 A. Key electrical parameters include a maximum on-resistance of 380 mΩ at 10 V gate drive, a gate charge of 45 nC, and a threshold voltage of 5 V. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes Vishay Planar Cell technology for optimized on-resistance and high-energy pulse handling capability.
• Features low gate charge to reduce switching losses and improve overall power conversion efficiency.
• Designed with robust avalanche characteristics to withstand high-energy pulses in commutation modes.

Single FETs, MOSFETs Applications

• Power Factor Correction (PFC) boost circuits
• PWM half-bridge configurations
• LLC resonant converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix BE3 against the datasheet to confirm lead-free status and RoHS compliance. Confirm the package type matches the design requirements. Check current lifecycle status as manufacturing schedules may change. Ensure thermal management solutions align with the specified power dissipation limits.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 500V blocking capability with moderate current handling. The TO-220AB package suits through-hole mounting. Compare the figure of merit derived from on-resistance and gate charge against alternative devices for optimal switching performance in high-frequency power supplies.

Single FETs, MOSFETs Part Context

This part belongs to the SIHP series of N-channel MOSFETs from Vishay Siliconix. It shares architectural similarities with other variants like SIHF16N50C but differs in packaging. The series is designed for general-purpose power switching applications where reliability and low conduction losses are critical.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include SIHP16N50C-E3 and SIHP16N50C-BE3 if pinout and specifications match. Verify that any replacement maintains the same TO-220AB footprint and electrical ratings.