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SIJ462ADP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 15.8A/39.3A PPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIJ462ADP-T1-GE3
- Description：MOSFET N-CH 60V 15.8A/39.3A PPAK
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：15.8A (Ta), 39.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.2mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1235 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.6W (Ta), 22.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SIJ462ADP-T1-GE3
Single FETs, MOSFETs Overview
The SIJ462ADP-T1-GE3 is a Vishay Siliconix N-channel 60 V (D-S) MOSFET utilizing TrenchFET Gen IV technology. It features a PowerPAK SO-8L single configuration with a maximum drain-source voltage of 60 V and continuous drain current of 39.3 A at TC = 25 °C. The device exhibits a typical total gate charge of 15 nC and a maximum on-state resistance of 7.2 mΩ at VGS = 10 V. Operating within a junction temperature range of -55 to +150 °C, it includes flexible leads for mechanical stress resilience.
Single FETs, MOSFETs Feature Summary
- TrenchFET Gen IV power MOSFET architecture
- Flexible lead design for mechanical stress resilience
- Optimized switching characteristics via low Qgd/Qgs ratio
- 100% tested for gate resistance and unclamped inductive switching
Single FETs, MOSFETs Applications
- Synchronous rectification
- High power density DC/DC converters
- DC/AC inverters
- Boost converters
- Motor drive control
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix T1-GE3 to confirm the PowerPAK SO-8L package, reel packaging format, and compliance with lead-free and halogen-free material standards. Ensure that the component's absolute maximum ratings are not exceeded during operation to maintain reliability and prevent permanent damage.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high efficiency and low power loss due to its very low gate charge and output charge specifications. The flexible lead structure provides enhanced durability against mechanical stress compared to standard leadless packages, making it suitable for robust industrial and automotive environments.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix SiJ series of N-channel MOSFETs. It utilizes the PowerPAK SO-8L package, which offers a compact footprint while maintaining high thermal performance. The device is designed for modern power management systems where space constraints and switching speed are critical factors.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package type or nominal voltage ratings without verifying electrical parameters and pin configurations.
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