SIL08N02-TP

Single FETs, MOSFETs Overview

The MCC SIL08N02-TP is an N-channel MOSFET utilizing Trench LV technology, housed in a SOT-23-6L package. It features a Drain-Source Voltage (VDS) of 20 V and a continuous Drain Current (ID) of 8 A at 25°C. The device exhibits a maximum Drain-Source On-Resistance (RDS(on)) of 17 mΩ at VGS=4.5V and ID=5A. Total Power Dissipation (PD) is rated at 1.5 W, with a thermal resistance (RθJA) of 83°C/W. Operating junction temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Trench LV MOSFET technology for high power and current handling capability
• Halogen-free "Green" device compliant with RoHS standards
• Epoxy material meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1 classification

Single FETs, MOSFETs Applications

• Low voltage power switching circuits
• DC-DC converter output stages
• Load switch applications in portable electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix "-TP" corresponds to Tape & Reel packaging containing 3000 pieces per reel as defined in the manufacturer's ordering information. Confirm that the component meets RoHS compliance requirements through the designated suffix designation. Ensure procurement channels are authorized distributors to guarantee genuine parts and full traceability according to Micro Commercial Components Corp policies.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring a 20 V breakdown and 8 A continuous current capacity. The low on-resistance of 17 mΩ supports efficient power management in compact SOT-23-6L footprints. Consider the 83°C/W thermal resistance when designing heat dissipation strategies for ambient temperatures up to 150°C. Verify gate threshold voltage compatibility with the driving logic levels for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the SIL series of N-channel MOSFETs manufactured by Micro Commercial Components. It utilizes silicon trench technology optimized for low voltage operations. The device is distinct within the transistor category by its specific combination of 20 V rating and SOT-23-6L surface mount packaging, designed for space-constrained electronic assemblies.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official replacement guides or datasheets for cross-reference data.