SIR416DP-T1-GE3

$1.36

Description：MOSFET N-CH 40V 50A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e478f4382275 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SIR416DP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 40V 50A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIR416DP-T1-GE3

Description：MOSFET N-CH 40V 50A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：90 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3350 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：5.2W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIR416DP-T1-GE3

SIR416DP-T1-GE3

Single FETs, MOSFETs Overview

The SiR416DP-T1-GE3 is a Vishay Siliconix N-channel Power MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and a continuous drain current of 50 A at TC = 25 °C. The device offers a maximum on-state resistance of 3.8 mΩ at VGS = 10 V and 4.2 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8, it supports a junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture for optimized performance
Leadless PowerPAK SO-8 package with exposed copper thermal pad
100% gate resistance and unclamped inductive switching tested

Single FETs, MOSFETs Applications

Point-of-load (POL) conversion
Synchronous rectification circuits

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix against official documentation to confirm specific ordering attributes. Confirm RoHS compliance status through manufacturer resources. Ensure the component matches the intended application requirements before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-resistance within a compact surface-mount footprint. Evaluate thermal management strategies based on the junction-to-case resistance. Verify that the operating voltage and current limits align with the circuit specifications.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix SiR series of N-channel MOSFETs. It utilizes the PowerPAK SO-8 package, which provides a footprint compatible with standard SO-8 layouts while offering superior thermal dissipation characteristics due to its leadless design and larger die size.