SIR422DP-T1-GE3

$1.04

Description：MOSFET N-CH 40V 40A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c55d53e5129b Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIR422DP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 40V 40A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIR422DP-T1-GE3

Description：MOSFET N-CH 40V 40A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1785 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：5W (Ta), 34.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIR422DP-T1-GE3

SIR422DP-T1-GE3

Single FETs, MOSFETs Overview

The SiR422DP-T1-GE3 is a Vishay Siliconix N-channel 40-V (D-S) MOSFET utilizing TrenchFET technology. It features a PowerPAK SO-8 leadless package with four drain pins and three source pins for enhanced thermal dissipation. The device offers a maximum continuous drain current of 40 A at TC = 25 °C, with an on-state resistance of 6.6 mΩ at VGS = 10 V and 8 mΩ at VGS = 4.5 V. Total gate charge is typically 32 nC at VGS = 10 V. Operating junction temperature ranges from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture providing low on-resistance
Leadless PowerPAK SO-8 package with exposed copper drain pad
100% tested for both gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

Point-of-load (POL) conversion
Synchronous rectification circuits

Single FETs, MOSFETs Procurement Notes

Verify the component datasheet Document Number 65025 against the manufacturer's official records to confirm technical specifications. Ensure that the ordering suffix matches the required lead-free and halogen-free compliance standards defined by IEC 61249-2-21. Confirm package orientation and pinout alignment with the PowerPAK SO-8 footprint before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution requires high current handling within a standard SO-8 footprint. The device provides DPAK-equivalent thermal performance while maintaining a smaller profile. Evaluate the specific gate drive voltage requirements, as on-resistance varies significantly between 4.5 V and 10 V logic levels.

Single FETs, MOSFETs Part Context

This part belongs to the SiR series of N-channel enhancement mode field-effect transistors manufactured by Vishay Siliconix. The series utilizes advanced trench gate technology to achieve superior figure-of-merit characteristics compared to traditional planar designs. The PowerPAK SO-8 packaging allows for direct substitution into existing standard SO-8 layouts without altering the board footprint.