SIR878ADP-T1-GE3

Description：MOSFET N-CH 100V 40A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ccf0721eb3f6 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SIR878ADP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 40A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIR878ADP-T1-GE3

Description：MOSFET N-CH 100V 40A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1275 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：5W (Ta), 44.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIR878ADP-T1-GE3

SIR878ADP-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiR878ADP-T1-GE3 is a single N-channel Power MOSFET utilizing TrenchFET technology. It features a 100 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device is housed in a leadless PowerPAK SO-8 surface-mount package. Key electrical parameters include a maximum continuous drain current of 40 A at TC = 25 °C, a typical total gate charge of 13.9 nC at VGS = 10 V, and a maximum on-state resistance of 0.014 Ω at VGS = 10 V.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET power MOSFET technology for optimized performance.
Features a leadless PowerPAK SO-8 package designed for efficient thermal dissipation.
Includes comprehensive protection through 100% Rg and UIS testing.

Single FETs, MOSFETs Applications

DC/DC primary side switching
Telecom and server 48 V full/half-bridge DC/DC converters
Industrial applications

Single FETs, MOSFETs Procurement Notes

Verify the component matches the specific ordering code SiR878ADP-T1-GE3 to ensure correct specifications. Confirm compliance with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free definitions during procurement. Validate that the received units correspond to the documented datasheet revision B issued on October 10, 2011, to guarantee accurate technical parameters.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency in low-voltage, high-current environments. The low on-state resistance minimizes conduction losses, while the small footprint supports dense board layouts. Ensure the application respects the absolute maximum ratings, particularly regarding pulsed drain current and avalanche energy limits under specified test conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SiR series of N-channel MOSFETs. It is manufactured using silicon technology and is specifically engineered for surface mount applications. The device integrates advanced trench gate architecture to deliver superior switching characteristics compared to standard planar technologies.

Single FETs, MOSFETs Replacement Considerations

Direct substitution requires verifying pin compatibility with standard SO-8 footprints. Check that replacement devices match the 100 V breakdown voltage and similar on-resistance values. Thermal management strategies must be reviewed if substituting packages with different junction-to-case thermal resistance ratings.