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SIRA28BDP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 18A/38A PPAK SO8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIRA28BDP-T1-GE3
- Description：MOSFET N-CH 30V 18A/38A PPAK SO8
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta), 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：+20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds：582 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 17W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SIRA28BDP-T1-GE3
Single FETs, MOSFETs Overview
The SiRA28BDP-T1-GE3 is a Vishay Siliconix N-channel PowerPAK SO-8 MOSFET utilizing TrenchFET Gen IV technology. It features a 30 V drain-source voltage rating and a maximum on-state resistance of 7.5 mΩ at VGS = 10 V, or 12 mΩ at VGS = 4.5 V. The device supports a continuous drain current of 38 A at TC = 25 °C and offers a typical total gate charge of 9.3 nC at VGS = 10 V. It operates within a junction temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- TrenchFET Gen IV power MOSFET architecture
- 100% Rg and UIS tested for reliability
Single FETs, MOSFETs Applications
- High power density DC/DC converters
- Synchronous rectification circuits
- VRMs and embedded DC/DC applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance as stated in the datasheet. Confirm package type matches PowerPAK SO-8 Single. Ensure design accounts for the exposed copper terminal requirements detailed in soldering recommendations.
Single FETs, MOSFETs Selection Notes
Select based on required VDS and RDS(on) performance at target VGS levels. Evaluate thermal management needs against the specified junction-to-case and junction-to-ambient thermal resistance ratings. Verify compatibility with gate drive voltages given the threshold voltage specifications.
Single FETs, MOSFETs Part Context
This component belongs to the SiRA series of N-channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAK SO-8 single configuration, designed for surface mount applications requiring high power density and efficient thermal dissipation in compact form factors.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout, electrical parameters, and package dimensions.
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