SIRA90DP-T1-RE3

$1.56

Description：MOSFET N-CH 30V 100A PPAK SO-8
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:31f5d716c24b Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIRA90DP-T1-RE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 100A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIRA90DP-T1-RE3

Description：MOSFET N-CH 30V 100A PPAK SO-8
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：153 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：10180 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIRA90DP-T1-RE3

SIRA90DP-T1-RE3

Single FETs, MOSFETs Overview

The SiRA90DP is a Vishay Siliconix N-Channel 30 V (D-S) MOSFET utilizing TrenchFET® Gen IV technology. It features a maximum drain-source voltage of 30 V and a continuous drain current of 100 A at TC = 25 °C. The device offers a maximum on-state resistance of 0.00080 Ω at VGS = 10 V and 0.00115 Ω at VGS = 4.5 V. Total gate charge is typically 48 nC at VGS = 4.5 V. It is housed in a single-channel PowerPAK SO-8 package with an operating junction temperature range from -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET® Gen IV power MOSFET architecture
100% Rg and UIS tested for reliability
Leadless PowerPAK SO-8 package design

Single FETs, MOSFETs Applications

Synchronous rectification
High power density DC/DC conversion
VRMs and embedded DC/DC
High current load switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as it determines lead-free status and packaging format. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the supplier provides valid traceability data and original manufacturer certification to guarantee authenticity and prevent counterfeit risks during procurement.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance is critical for high-current applications within a 30 V system. The PowerPAK SO-8 package allows for direct substitution into standard SO-8 footprints while offering superior thermal performance comparable to DPAK packages. Evaluate thermal management needs based on the specified junction-to-case resistance ratings.

Single FETs, MOSFETs Part Context

This part belongs to the SiRA series of Vishay Siliconix N-Channel MOSFETs. It utilizes the PowerPAK SO-8 package, which shares the footprint and pin-out of standard SO-8 devices but accommodates a larger die size for improved thermal handling. The series is designed for high-efficiency power switching applications requiring compact form factors.