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SIS330DN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 35A PPAK1212-8. Review the specifications below when checking this part for your BOM.
The SiS330DN is a Vishay Siliconix N-Channel Power MOSFET utilizing TrenchFET technology, housed in a leadless PowerPAK 1212-8 surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current capacity of 35 A at a case temperature of 25 °C. The device exhibits a maximum on-state resistance of 0.0075 Ω at a gate-source voltage of 4.5 V and 0.0056 Ω at 10 V. Thermal performance includes a junction-to-case thermal resistance of 2.4 °C/W under steady-state conditions.
Verify the specific ordering suffix to confirm the inclusion of tape-and-reel packaging and halogen-free compliance. Confirm that the component meets RoHS Directive 2002/95/EC requirements for your manufacturing process. Ensure the datasheet revision matches your design specifications before finalizing procurement orders.
Select this component when space constraints require a compact footprint alongside high thermal dissipation capabilities. The low on-resistance minimizes conduction losses in high-current switching environments. Evaluate the gate charge parameters against your driver circuit's output capability to ensure efficient switching transitions.
This part belongs to the SiS series of single N-channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAK 1212-8 package, which offers superior thermal performance compared to standard SO-8 or TSSOP-8 packages while maintaining a significantly smaller footprint.
Consult official Vishay documentation for verified direct replacements. Cross-reference pinouts and thermal characteristics carefully if substituting with other PowerPAK 1212-8 devices.
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