SIS415DNT-T1-GE3

$0.82

Description：MOSFET P-CH 20V 35A PPAK1212-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:852c0bbbf778 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIS415DNT-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 20V 35A PPAK1212-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIS415DNT-T1-GE3

Description：MOSFET P-CH 20V 35A PPAK1212-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：180 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：5460 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：3.7W (Ta), 52W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8
Package / Case：PowerPAK® 1212-8

Single FETs, MOSFETs datasheet and documents for SIS415DNT-T1-GE3

SIS415DNT-T1-GE3

Single FETs, MOSFETs Overview

The SIS415DNT-T1-GE3 is a Vishay Siliconix P-channel power MOSFET utilizing TrenchFET Gen III technology. It features a -20 V drain-source voltage rating and a continuous drain current of -35 A at TC = 25 °C. The device is housed in a leadless PowerPAK 1212-8S package with a maximum height of 0.8 mm. Key electrical parameters include a maximum on-resistance of 0.0040 Ω at VGS = -10 V, a gate charge of 180 nC (typical), and an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen III P-channel architecture for optimized performance
Thin 0.8 mm maximum profile suitable for space-constrained designs
100% tested for gate leakage and single-pulse avalanche energy

Single FETs, MOSFETs Applications

Battery switch applications in mobile devices
Load switching in tablet PCs and smartphones
Power management circuits in mobile computing systems

Single FETs, MOSFETs Procurement Notes

Verify the component against official Vishay datasheet document number 63684 to confirm specifications. Ensure the ordering suffix matches the required lead-free and halogen-free configuration. Validate that the PowerPAK 1212-8S package dimensions align with the target PCB footprint requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage high-current applications requiring a compact surface-mount solution. Consider the thermal resistance ratings when designing heat dissipation strategies. Verify that the gate drive voltage meets the specified thresholds for optimal on-state resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the SiS series of P-channel MOSFETs manufactured by Vishay Siliconix. It utilizes advanced trench gate technology to achieve low on-resistance within a small form factor. The PowerPAK 1212-8S package provides efficient thermal transfer capabilities while maintaining a minimal board area footprint.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical characteristics and package compatibility.