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SIS426DN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 20V 35A PPAK1212-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIS426DN-T1-GE3
- Description：MOSFET N-CH 20V 35A PPAK1212-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1570 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：3.7W (Ta), 52W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® 1212-8
- Package / Case：PowerPAK® 1212-8
Single FETs, MOSFETs datasheet and documents for SIS426DN-T1-GE3
Single FETs, MOSFETs Overview
The Vishay Siliconix SIS426DN-T1-GE3 is a single N-channel Power MOSFET utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and a maximum continuous drain current of 35 A at a case temperature of 25 °C. The device offers a typical on-state resistance of 4.5 mΩ at VGS = 10 V and 5.8 mΩ at VGS = 4.5 V. Total gate charge is typically 13.2 nC at VGS = 4.5 V. It is housed in a leadless PowerPAK 1212-8 surface-mount package with an exposed copper thermal pad.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchFET power MOSFET technology for optimized performance
- Features a leadless PowerPAK 1212-8 package with an exposed copper thermal pad for efficient heat dissipation
- Includes 100% Rg and UIS testing to ensure reliability
Single FETs, MOSFETs Applications
- Point-of-load (POL) regulation
- DC/DC converter circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix -T1-GE3 to confirm reel packaging, lead-free status, and halogen-free compliance according to IEC 61249-2-21. Confirm that the component matches the Vishay Siliconix manufacturer designation. Ensure the datasheet revision aligns with current design requirements before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low on-resistance within a compact footprint. The PowerPAK 1212-8 package provides superior thermal performance compared to standard SO-8 packages. Verify that the system's gate drive voltage supports the specified RDS(on) thresholds at either 4.5 V or 10 V for optimal efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the SiS series of N-channel MOSFETs from Vishay Siliconix. It is designed as a space-saving alternative to larger packages while maintaining high current handling capabilities. The device is intended for general-purpose switching applications where low thermal impedance and small board area are critical constraints.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for verified cross-reference part numbers. Do not substitute based solely on pin compatibility; verify electrical parameters and thermal characteristics match the original design requirements.
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