SIS472DN-T1-GE3

Single FETs, MOSFETs Overview

The SiS472DN-T1-GE3 is a single N-channel 30 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK 1212-8 surface-mount package. The device is optimized for high-side synchronous rectifier operation and features a maximum continuous drain current of 20 A at a case temperature of 25 °C. Key electrical parameters include an on-state resistance of 0.0089 Ω at VGS = 10 V and 0.0124 Ω at VGS = 4.5 V, with a typical total gate charge of 9.8 nC.

Single FETs, MOSFETs Feature Summary

• Utilizes TrenchFET power MOSFET technology for enhanced performance.
• Optimized specifically for high-side synchronous rectifier applications.
• Includes 100% testing for both gate resistance and unclamped inductive switching (UIS).
• Constructed as a lead-free and halogen-free component compliant with IEC 61249-2-21.

Single FETs, MOSFETs Applications

• Notebook CPU core high-side switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-T1-GE3' to confirm tape-and-reel packaging and halogen-free status. Ensure the procurement documentation explicitly references datasheet number 67307. Confirm that the received components match the manufacturer's marking requirements for the PowerPAK 1212-8 package. Validate RoHS compliance through official certificates provided by Vishay.

Single FETs, MOSFETs Selection Notes

Select this component when designing space-constrained circuits requiring low thermal impedance. The PowerPAK 1212-8 package offers superior heat dissipation compared to standard SO-8 or TSSOP-8 packages. Consider the 30 V drain-source voltage rating and the 20 A continuous current capability at 25 °C case temperature. Evaluate the gate charge characteristics for switching speed requirements in synchronous rectifier topologies.

Single FETs, MOSFETs Part Context

This part belongs to the SiS472DN series of N-channel MOSFETs from Vishay Siliconix. It is designed as a derivative of the PowerPAK SO-8 family, providing similar thermal performance in a significantly smaller footprint. The device integrates a single channel within the compact PowerPAK 1212-8 leadless package, targeting portable electronics and high-density power management systems.

Single FETs, MOSFETs Replacement Considerations

Check for direct cross-reference availability within the Vishay portfolio. Verify pinout compatibility and thermal resistance specifications against existing designs. Ensure replacement parts maintain the same PowerPAK 1212-8 footprint and mounting requirements.

Single FETs, MOSFETs FAQ

What is the maximum junction-to-case thermal resistance?

The maximum junction-to-case thermal resistance is 4.5 °C/W under steady-state conditions.

Is the device suitable for unclamped inductive switching?

Yes, the datasheet specifies that 100% of the devices are tested for unclamped inductive switching (UIS).