SIS488DN-T1-GE3

$1.04

Description：MOSFET N-CH 40V 40A PPAK1212-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4a7f919980f2 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIS488DN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 40V 40A PPAK1212-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIS488DN-T1-GE3

Description：MOSFET N-CH 40V 40A PPAK1212-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1330 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.7W (Ta), 52W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8
Package / Case：PowerPAK® 1212-8

Single FETs, MOSFETs datasheet and documents for SIS488DN-T1-GE3

SIS488DN-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiS488DN is an N-Channel Power MOSFET utilizing TrenchFET technology, housed in a leadless PowerPAK 1212-8 surface-mount package. It features a drain-source voltage rating of 40 V and supports continuous drain currents up to 40 A at a case temperature of 25 °C. The device offers a maximum on-state resistance of 5.5 mΩ at VGS = 10 V and 7.5 mΩ at VGS = 4.5 V. Key dynamic parameters include a typical total gate charge of 9.8 nC at VGS = 4.5 V and a maximum junction-to-case thermal resistance of 2.4 °C/W.

Single FETs, MOSFETs Feature Summary

TrenchFET Power MOSFET architecture with 100% gate resistance and unclamped inductive switching (UIS) testing
Capable of operation with 5 V gate drive logic levels
Leadless PowerPAK 1212-8 package providing ultra-low thermal impedance for space-constrained designs

Single FETs, MOSFETs Applications

Synchronous rectification
Synchronous buck converters
ORing circuits
Load switching
Motor drive switches

Single FETs, MOSFETs Procurement Notes

Verify the specific revision status of the datasheet Document Number 62882 before finalizing design specifications. Confirm that the PowerPAK 1212-8 package singulation process results in exposed copper terminals, which requires adherence to recommended soldering profiles rather than manual iron rework. Ensure compliance with material categorization definitions provided by the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component when low thermal impedance and compact footprint are critical requirements. The device supports both 4.5 V and 10 V gate drive voltages, offering flexibility for various control logic interfaces. Evaluate the junction-to-ambient thermal resistance based on the specific PCB copper area and layer stack configuration to ensure adequate heat dissipation under steady-state conditions.

Single FETs, MOSFETs Part Context

This part belongs to the SiS series of N-Channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAK 1212-8 package, which is a derivative of the PowerPAK SO-8 technology designed to maximize die area within a smaller footprint. The package provides superior thermal performance compared to standard SMT packages like TSSOP-8 or SO-8.