SIS606BDN-T1-GE3

$1.34

Description：MOSFET N-CH 100V 9.4A/35.3A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0092cfa3f0ab Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIS606BDN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 9.4A/35.3A PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIS606BDN-T1-GE3

Description：MOSFET N-CH 100V 9.4A/35.3A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：9.4A (Ta), 35.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7.5V, 10V
Rds On (Max) @ Id, Vgs：17.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1470 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：3.7W (Ta), 52W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8
Package / Case：PowerPAK® 1212-8

Single FETs, MOSFETs datasheet and documents for SIS606BDN-T1-GE3

SIS606BDN-T1-GE3

Single FETs, MOSFETs Overview

The SIS606BDN-T1-GE3 is a Vishay Siliconix N-channel MOSFET featuring TrenchFET Gen IV technology. It operates with a drain-source voltage of 100 V and a continuous drain current of 35.3 A at TC = 25 °C. The device offers a maximum on-resistance of 0.0174 Ω at VGS = 10 V and 0.0205 Ω at VGS = 7.5 V. Typical gate charge is 15.1 nC at VGS = 7.5 V. It is housed in a leadless PowerPAK 1212-8 package, rated for junction temperatures from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET Gen IV power MOSFET architecture
Optimized for low RDS(on) and Qg figure-of-merit
Tuned for the lowest RDS(on) and Qoss figure-of-merit
Verified through 100% Rg and UIS testing

Single FETs, MOSFETs Applications

Synchronous rectification
Primary side switch
DC/DC converter
Motor drive switch
Battery and load switch

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number SIS606BDN-T1-GE3 with official Vishay documentation. Confirm compliance with RoHS and REACH standards as specified in the datasheet. Ensure the ordering suffix matches the required lead-free and halogen-free configuration. Validate that the PowerPAK 1212-8 package dimensions align with your PCB footprint requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency and low conduction losses within a compact surface-mount form factor. The optimized figure-of-merits make it suitable for high-frequency switching environments. Consider the thermal resistance ratings when designing heat dissipation strategies, particularly for synchronous rectification or motor drive scenarios where continuous current handling is critical.

Single FETs, MOSFETs Part Context

This part belongs to the SiS series of N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes advanced TrenchFET technology to achieve superior performance metrics compared to standard planar devices. The PowerPAK 1212-8 package provides a small footprint while maintaining robust electrical characteristics, positioning it as a solution for modern, space-constrained power management designs.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying absolute maximum ratings and thermal characteristics against the original specifications.