SIS9634LDN-T1-GE3

Overview

The SiS9634LDN is a dual N-channel 60-V (D-S) MOSFET utilizing TrenchFET® Gen IV technology. It features an RDS(on) of 0.031 Ω max at VGS = 10 V and 0.0448 Ω max at VGS = 4.5 V, with a continuous drain current (ID) of 6 A. The device has a typical total gate charge (Qg) of 7.1 nC at VGS = 10 V and 3.3 nC at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a leadless PowerPAK 1212-8 package.

Feature Summary

• TrenchFET® Gen IV power MOSFET structure
• Optimized Qg, Qgd, and Qgd/Qgs ratio for reduced switching loss
• 100% Rg and UIS tested

Applications

• Synchronous rectification
• Load switch
• Motor drive control
• Battery management

Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm compliance details. Ensure that the component matches the required package type and electrical specifications for the intended circuit design before finalizing procurement orders.

Selection Notes

Select this component based on its dual configuration and low on-resistance characteristics suitable for high-efficiency applications. Consider the thermal resistance ratings and maximum power dissipation limits when designing the heat dissipation strategy for the target system.

Part Context

This part belongs to the Vishay Siliconix SiS series of power MOSFETs. It is designed for compact surface-mount applications requiring robust performance in power management circuits. The PowerPAK 1212-8 package provides a small footprint while maintaining adequate thermal handling capabilities.

Replacement Considerations

Consult official Vishay documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before considering any alternative components.