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Product Detailed Parameters
- Description：MOSFET 2N-CH 80V 8.9A 8POWERPAIR
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
- Rds On (Max) @ Id, Vgs：24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：820pF @ 40V
- Power - Max：4.3W (Ta), 33W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The SIZ260DT-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features an 80 V drain-source voltage and low on-resistance of 24.5 mΩ at 10 V gate drive. The device supports continuous drain currents up to 24.7 A at 25 °C case temperature. Packaged in a leadless PowerPAIR 3 x 3S format, it integrates two channels for half-bridge configurations. Key dynamic parameters include a typical total gate charge of 13.1 nC at 10 V and optimized switching characteristics.
Feature Summary
- Integrated half-bridge power stage with optimized Qgs/Qgd ratio for improved switching performance
- TrenchFET Gen IV architecture providing low on-resistance and high efficiency
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
- Leadless PowerPAIR 3 x 3S package design for compact surface-mount applications
Applications
- POL (Point-of-Load) converters
- Synchronous buck converter topologies
- Telecom DC/DC power supplies
- Resonant converter circuits
- Motor drive control systems
Procurement Notes
Verify the component against official Vishay datasheet document number 77236. Confirm the ordering suffix -T1-GE3 indicates reel packaging and compliance with RoHS and halogen-free standards. Ensure the supplier provides traceability documentation matching the manufacturer's specifications for quality assurance.
Selection Notes
Select this component for designs requiring an 80 V rating with integrated dual-channel functionality. Evaluate thermal management requirements based on the junction-to-case resistance of 33.8 °C/W. Consider the gate charge characteristics when designing driver circuits for synchronous rectification or resonant applications.
Part Context
This part belongs to the SiZ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR 3 x 3S leadless package, which offers enhanced thermal performance compared to traditional plastic packages. The series is designed for high-density power conversion applications requiring low profile and efficient heat dissipation.
Replacement Considerations
Consult the official Vishay replacement guide for verified alternatives. Cross-reference pinout compatibility and thermal resistance values when substituting similar dual MOSFET packages.
