SIZ328DT-T1-GE3

$1.13

Description：MOSFET 2N-CH 25V 11.1A 8PWR33
Series：TrenchFET® Gen IV

SKU:46ce97723844 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 25V 11.1A 8PWR33
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：25V
Current - Continuous Drain (Id) @ 25°C：11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs：15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.9nC @ 10V, 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：325pF @ 10V, 600pF @ 10V
Power - Max：2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-Power33 (3x3)
Grade：-
Qualification：-

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SIZ328DT-T1-GE3

Overview

The SiZ328DT-T1-GE3 is a dual N-channel 25 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET Gen IV technology and is housed in a PowerPAIR 3 x 3 leadless package. Channel-1 features a maximum RDS(on) of 0.015 Ω at VGS = 10 V with a continuous drain current of 25.3 A, while Channel-2 has a maximum RDS(on) of 0.010 Ω at VGS = 10 V with a continuous drain current of 30 A. The device supports a gate-source voltage range of +16 V and -12 V, operates within a junction temperature range of -55 °C to +150 °C, and includes 100% Rg and UIS testing.

Feature Summary

TrenchFET Gen IV power MOSFET architecture
Optimized Qgs/Qgd ratio for improved switching characteristics
Leadless PowerPAIR 3 x 3 package design

Applications

CPU core power
Computer / server peripherals
POL (Point-of-Load)
Synchronous buck converter
Telecom DC/DC

Procurement Notes

Verify the component against official Vishay datasheet document number 76059 to confirm authenticity. Ensure the ordering suffix matches the specified lead-free and halogen-free configuration. Validate that the package type corresponds to the PowerPAIR 3 x 3 leadless format before finalizing procurement.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications. Consider the specific on-resistance requirements for each channel, as Channel-2 offers lower resistance than Channel-1. Evaluate thermal management needs based on the junction-to-ambient and junction-to-case thermal resistance ratings provided in the specifications.

Part Context

This part belongs to the SiZ series of dual N-channel MOSFETs from Vishay Siliconix. It is designed for high-efficiency power conversion in space-constrained environments. The PowerPAIR package provides enhanced thermal performance compared to traditional surface-mount packages.