SIZ342BDT-T1-GE3

Description：MOSFET 2N-CH 30V 15.4A 8PWR33
Series：TrenchFET®

SKU:1695c04ca7d1 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 15.4A 8PWR33
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel, Common Source (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：15.4A (Ta), 32.9A (Tc)
Rds On (Max) @ Id, Vgs：9.65mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：550pF @ 15V
Power - Max：3.7W (Ta), 16.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-Power33 (3x3)
Grade：-
Qualification：-

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SIZ342BDT-T1-GE3

Overview

The SiZ342BDT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET Gen IV technology and is housed in a PowerPAIR 3 x 3 package. The device features a maximum drain-source voltage of 30 V, with continuous drain currents reaching 32.9 A at TC = 25 °C and 15.4 A on an FR4 board. On-resistance is specified as 9.65 mΩ max at VGS = 10 V and 14.5 mΩ max at VGS = 4.5 V. Total gate charge is typically 8.4 nC at VGS = 10 V. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

High side and low side MOSFETs form optimized combination for 50 % duty cycle
Optimized RDS(on) - Qg and RDS(on) - Qgd FOM elevates efficiency for high frequency switching
100 % Rg and UIS tested

Applications

Synchronous buck
DC / DC conversion
Half bridge
POL

Procurement Notes

Verify the component against official datasheet specifications before integration. Confirm that the ordering suffix matches the required lead-free and halogen-free status. Ensure thermal management aligns with the provided junction-to-case and junction-to-ambient resistance ratings for the intended operating environment.

Selection Notes

Select this component for applications requiring high-frequency switching efficiency due to its optimized figure of merit. Consider the PowerPAIR 3 x 3 package dimensions for PCB layout constraints. Evaluate the gate drive requirements against the specified threshold voltage and total gate charge values to ensure proper switching performance.

Part Context

This part belongs to the SiZ series of dual N-channel MOSFETs from Vishay Siliconix. It represents an evolution in TrenchFET technology designed to improve power density and switching speed. The PowerPAIR package offers a compact footprint suitable for modern surface-mount assembly processes.