ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 36A 8POWERPAIR
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual), Schottky
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
- Rds On (Max) @ Id, Vgs：2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：49nC @ 10V, 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1630pF @ 15V, 5550pF @ 15V
- Power - Max：4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (6x5)
- Grade：-
- Qualification：-
Download product information
Overview
The SIZF906BDT-T1-GE3 is a dual N-channel 30 V MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology. It features asymmetric channel configurations within a PowerPAIR 6 x 5F package. Channel 1 has a maximum RDS(on) of 2.1 mΩ at VGS = 10 V and a continuous drain current (ID) of 105 A at TC = 25 °C. Channel 2 offers lower resistance with a maximum RDS(on) of 0.68 mΩ at VGS = 10 V and an ID of 257 A at TC = 25 °C. The device supports a gate-source voltage range of -16 V to +20 V and operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Asymmetric dual N-channel architecture optimized for low-side switching applications
- Integrated Schottky diode on the second channel to minimize reverse recovery losses
- Leadless PowerPAIR package design providing enhanced thermal performance
Applications
- CPU core power delivery systems
- Synchronous buck converters
- Point-of-load (POL) regulation
- Telecom DC/DC conversion circuits
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's official datasheet document number 77619. Confirm that the ordering suffix matches the specified lead-free and halogen-free configuration. Ensure the PowerPAIR package dimensions align with the recommended land pattern specifications provided in the manufacturer's documentation before finalizing procurement.
Selection Notes
Select this component when designing synchronous rectification stages requiring distinct current handling capabilities per channel. The integrated Schottky diode on Channel 2 reduces external component count and improves efficiency during freewheeling periods. Evaluate thermal management requirements based on the specific junction-to-case resistance values for each channel under steady-state conditions.
Part Context
This part belongs to the SiZF series of Vishay Siliconix power MOSFETs. It utilizes TrenchFET Gen IV technology to achieve low on-resistance and fast switching speeds. The device is designed specifically for high-current, low-voltage applications where compact footprint and thermal efficiency are critical constraints.
Replacement Considerations
Direct replacements must match the 30 V rating, dual N-channel configuration, and PowerPAIR 6 x 5F package. Verify that any substitute maintains comparable RDS(on) values and thermal characteristics for both channels.
