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Product Detailed Parameters
- Description：IGBT NPT 1200V 6.2A TO263-3-2
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：6.2 A
- Current - Collector Pulsed (Icm)：9.6 A
- Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 2A
- Power - Max：62 W
- Switching Energy：220µJ
- Input Type：Standard
- Gate Charge：11 nC
- Td (on/off) @ 25°C：23ns/260ns
- Test Condition：800V, 2A, 91Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：PG-TO263-3-2
- Grade：-
- Qualification：-
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Overview
The SKB02N120 is a fast NPT-technology IGBT with an integrated anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 1200 V and a DC collector current of 6.2 A at 25°C. The device offers a short circuit withstand time of 10 µs and operates within a junction temperature range of -55°C to +150°C. Packaged in PG-TO-263-3-2, it provides low turn-off energy and high ruggedness suitable for frequency inverter applications.
Feature Summary
- NPT technology ensures tight parameter distribution and parallel switching capability
- Integrated soft, fast recovery anti-parallel diode reduces system complexity
- High ruggedness with stable behavior across wide temperature ranges
- Short circuit withstand capability up to 10 microseconds
Applications
- Frequency inverters for washing machines
- Fan motor control systems
- Pump drive applications
- Vacuum cleaner power electronics
Procurement Notes
Verify the specific revision level against the latest official datasheet before implementation. Confirm that the PG-TO-263-3-2 package dimensions match the target PCB footprint. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under maximum load conditions.
Selection Notes
Select this component for low-power inverter designs requiring robust short-circuit protection. The NPT technology provides superior temperature stability compared to previous generations. Consider the 1200V rating for safety margins in higher voltage bus applications. Evaluate gate resistor requirements to optimize switching losses within the specified operating limits.
Part Context
This IGBT belongs to Infineon's portfolio of fast switching devices designed for household appliance motor drives. It utilizes Non-Punch Through (NPT) technology to deliver consistent electrical characteristics. The integration of an emitter-controlled diode simplifies circuit topology by eliminating external freewheeling components.
Replacement Considerations
Consult official replacement lists for updated generation equivalents. Verify pinout compatibility when substituting older SKB series variants. Ensure new selections maintain the required 1200V blocking voltage and PG-TO-263-3-2 package form factor.
