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The SKB02N60 is a fast NPT-technology IGBT with an integrated anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 600V, a DC collector current of 6.0A at 25°C, and a saturation voltage of 2.2V. The device offers a short circuit withstand time of 10µs and operates within a junction temperature range of -55°C to +150°C. Packaged in PG-TO-263-3-2, it provides low switching losses and high ruggedness.
Verify the component matches the specific Infineon datasheet revision 2.3 dated June 12, 2013. Confirm the package designation is PG-TO-263-3-2 and that the marking code corresponds to K06N60. Ensure compliance with RoHS standards and lead-free plating requirements as specified in the official documentation.
Select this component for applications requiring robust performance in household appliance motor drives. The NPT technology ensures stable behavior across wide temperature ranges. Consider the 10µs short circuit withstand time for protection schemes. Verify thermal management capabilities against the specified junction-to-case resistance values.
This part belongs to Infineon's Fast IGBT portfolio designed specifically for consumer electronics and home appliances. It integrates a high-performance diode to simplify circuit design. The product spectrum includes PSpice models for simulation support. It is qualified according to JEDEC standards for target applications.
Consult official Infineon documentation for confirmed substitute part numbers. Do not assume compatibility based on generic electrical parameters alone. Verify package dimensions and pinout configurations before implementation.
The maximum short circuit withstand time is 10µs under conditions where VGE = 15V, VCC ≤ 600V, and Tj ≤ 150°C.
NPT technology provides very tight parameter distribution, high ruggedness, temperature-stable behavior, and parallel switching capability.
The operating junction and storage temperature range is from -55°C to +150°C.