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The SKB04N60 is a fast NPT-technology IGBT with an integrated anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 600V, a DC collector current of 9.4A at 25°C, and a saturation voltage of 2.3V. The device offers a short circuit withstand time of 10µs and operates within a junction temperature range of -55°C to +150°C. Packaged in PG-TO-263-3-2, it provides low conduction losses and reduced switching energy.
Verify the component against the official Infineon datasheet revision 2.4 dated June 12, 2013. Confirm that the package marking matches K04N60 and the physical housing corresponds to the PG-TO-263-3-2 outline. Ensure compliance with RoHS standards and Pb-free lead plating requirements before integration into designs.
Select this component for applications requiring robust performance under high thermal stress due to its NPT construction. The 10µs short circuit withstand time allows for effective protection schemes. Consider the specific gate charge and capacitance values when designing drive circuits to optimize switching speeds and minimize electromagnetic interference.
This part belongs to Infineon's Fast IGBT series designed for household appliance motor control. It integrates a high-performance diode to simplify circuit topology. The PG-TO-263-3-2 package facilitates surface-mount assembly while providing adequate thermal dissipation for medium-power inverter applications.
Consult the manufacturer's product spectrum for updated alternatives. Verify pinout compatibility and thermal resistance characteristics when substituting older generation devices or comparing with other 600V IGBT families.