SKB06N60HSATMA1

$1.05

Description：IGBT NPT 600V 12A TO263-3-2
Series：-

SKU:2b9745229e9d Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 12A TO263-3-2
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：12:00 AM
Current - Collector Pulsed (Icm)：24 A
Vce(on) (Max) @ Vge, Ic：3.15V @ 15V, 6A
Power - Max：68 W
Switching Energy：190µJ
Input Type：Standard
Gate Charge：33 nC
Td (on/off) @ 25°C：11ns/196ns
Test Condition：400V, 6A, 50Ohm, 15V
Reverse Recovery Time (trr)：100 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3-2
Grade：-
Qualification：-

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SKB06N60HSATMA1

Overview

The SKB06N60HSATMA1 is a high-speed NPT-technology IGBT with an integrated anti-parallel diode, rated at 600V collector-emitter voltage and 12A DC collector current. It features a PG-TO-263-3-2 package and operates up to 150°C junction temperature. Key electrical parameters include a saturation voltage of 2.8V (typical) and turn-off energy of 0.09mJ. The device supports short-circuit withstand times of 10µs and is designed for switching frequencies above 30kHz.

Feature Summary

Utilizes NPT technology for parallel switching capability and tight parameter distribution.
Features 30% lower turn-off energy compared to previous generations.
Designed for operation at switching frequencies exceeding 30 kHz.
Provides 10 µs short circuit withstand time for enhanced ruggedness.

Applications

High frequency power supplies
Motor drives
Uninterruptible power supplies

Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure compatibility with PG-TO-263-3-2 footprint requirements during procurement planning. Cross-reference JEDEC qualification status for target applications before finalizing orders.

Selection Notes

Select this component for designs requiring high switching speeds and robust short-circuit tolerance. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate gate resistor requirements to optimize switching losses within the specified operating temperature range.

Part Context

This part belongs to Infineon's high-speed IGBT portfolio utilizing NPT technology. It is engineered for applications demanding low switching losses and high reliability. The integration of an anti-parallel diode simplifies circuit design for inductive loads.

Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical characteristics and thermal performance against the original datasheet.