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The SKB10N60AATMA1 is a fast NPT-technology IGBT with an integrated soft, fast recovery anti-parallel Emitter Controlled Diode. It features a PG-TO-263-3-2 package and supports a collector-emitter voltage of 600V. The device provides a DC collector current of 20A at 25°C and 10.6A at 100°C. The saturation voltage is 2.3V at 10A. It offers a short circuit withstand time of 10µs and operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure the component matches the PG-TO-263-3-2 footprint requirements. Cross-reference the datasheet revision 2.3 for accurate thermal resistance values during PCB layout planning.
Select this component for applications requiring robust short-circuit protection up to 10µs. The NPT technology ensures stable behavior across wide temperature ranges. Consider the integrated diode characteristics when designing inductive load circuits to manage reverse recovery effects effectively.
This part belongs to Infineon's Fast IGBT series utilizing NPT technology. It is designed as a discrete power switch combining an IGBT and a diode in a single surface-mount package. The product line targets efficiency improvements in household appliance motor drives.
SKB10N60A
The device supports a short circuit withstand time of 10µs under specified conditions.
Yes, it includes a soft, fast recovery anti-parallel Emitter Controlled Diode.
It utilizes Non-Punch Through (NPT) technology for improved ruggedness and parameter distribution.