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The SKB15N60 is a fast NPT-technology IGBT with an integrated anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 600V and a continuous DC collector current of 31A at 25°C case temperature, dropping to 15A at 100°C. The saturation voltage is 2.3V max at 15A and 150°C. Power dissipation reaches 139W at 25°C. Operating junction temperature ranges from -55°C to +150°C. Short circuit withstand time is 10µs.
Verify the specific datasheet revision (Rev. 2.3) matches design requirements. Confirm package marking K15N60 aligns with PCB silkscreen. Ensure thermal management supports 139W dissipation limits. Check JEDEC qualification status for target application reliability standards.
Select based on 600V blocking capability and 15A continuous load requirements. Consider NPT ruggedness for high-temperature stability. Evaluate short circuit tolerance if fault protection relies on device survival. Verify gate drive compatibility with specified threshold voltages.
Part of Infineon's fast IGBT portfolio utilizing Non-Punch-Through technology. Designed specifically for household appliance inverter applications requiring high efficiency and reliability. Competes with other 600V single IGBT modules in the PG-TO263-3-2 package.
SKB15N60ATMA1 is a tape-and-reel variant of this component. Verify pinout and thermal characteristics match before substitution.
The device can withstand a short circuit for 10 microseconds under specified conditions.
Yes, it features an integrated soft, fast recovery anti-parallel Emitter Controlled Diode.
It utilizes Non-Punch-Through (NPT) technology for improved ruggedness and temperature stability.