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Product Detailed Parameters
- Description：IGBT,Six-Pack,1200V,50A
- Series：*
- Mfr：Semikron
- Package：Retail Package
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The Semikron SKM50GD125D-SEKG is a SEMITRANS 3 half-bridge power module integrating NPT IGBT chips and fast soft inverse CAL diodes. It features an isolated copper baseplate utilizing Direct Copper Bonding (DCB) technology for thermal management and electrical isolation. The module employs pressure contact technology to ensure reliable thermal interfaces without soldering. Key electrical ratings include a collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C case temperature. The package dimensions are 106 mm in length, 62 mm in width, and 31 mm in height.
Feature Summary
- Integrates NPT IGBT technology with positive temperature coefficient characteristics for safe parallel operation.
- Incorporates fast and soft inverse CAL diodes to minimize switching losses and electromagnetic interference.
- Utilizes pressure contact technology for robust mechanical connection and efficient heat transfer.
- Features large clearance and creepage distances on the isolated DCB ceramic substrate.
Applications
- Switched mode power supplies operating above 20 kHz
- Resonant inverters up to 100 kHz
- Inductive heating systems
- Electronic welders
Procurement Notes
Verify the specific suffix SEKG against official Semikron documentation to confirm driver board compatibility or terminal configuration. Ensure the component matches the required SEMITRANS 3 housing specifications. Cross-reference legacy part numbers if replacing older designs. Confirm that the 1200 V rating aligns with the system's peak voltage requirements. Validate the 50 A current rating under the intended thermal conditions.
Selection Notes
Select this module for applications requiring high short-circuit capability and low tail current. The NPT technology ensures stable performance across varying temperatures. The integrated CAL diodes support high-frequency switching operations efficiently. Consider the 106x62x31 mm footprint for PCB layout constraints. Verify that the pressure contact mounting method is compatible with the heatsink design.
Part Context
This component belongs to the Semikron SEMITRANS 3 product line, designed for general-purpose power electronics. It utilizes Generation 4 IGBT technology combined with CAL diodes. The module is manufactured in Slovakia. It serves as a compact solution for medium-power inversion and rectification tasks. The design emphasizes reliability through homogeneous silicon construction.
Replacement Considerations
Check for legacy part number equivalents in Semikron catalogs. Verify pinout compatibility before substituting with other SEMITRANS 3 modules. Ensure the replacement maintains the same 1200 V and 50 A ratings. Confirm that the alternative module supports the required switching frequency and thermal dissipation needs.
