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Product Detailed Parameters
- Description：IGBT NPT 600V 9.4A TO220-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：9.4 A
- Current - Collector Pulsed (Icm)：19 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 4A
- Power - Max：50 W
- Switching Energy：131µJ
- Input Type：Standard
- Gate Charge：24 nC
- Td (on/off) @ 25°C：22ns/237ns
- Test Condition：400V, 4A, 67Ohm, 15V
- Reverse Recovery Time (trr)：180 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：PG-TO220-3-1
- Grade：-
- Qualification：-
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Overview
The SKP04N60 is a fast NPT-technology IGBT with an integrated soft, fast recovery anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 600 V and a DC collector current of 9.4 A at 25°C. The device operates within a junction temperature range of -55°C to +150°C and offers a short circuit withstand time of 10 µs. Packaged in PG-TO-220-3-1 (TO-220AB), it provides low conduction losses and high ruggedness suitable for parallel switching.
Feature Summary
- NPT technology ensures tight parameter distribution and temperature-stable behavior
- Soft, fast recovery anti-parallel Emitter Controlled Diode minimizes reverse recovery effects
- High ruggedness supports parallel switching capability
- Short circuit withstand time of 10 µs enhances system reliability
Applications
- Motor controls
- Inverter circuits
Procurement Notes
Verify the specific datasheet revision and JEDEC qualification status before integration. Confirm that the PG-TO-220-3-1 package dimensions match the target PCB footprint. Ensure thermal management designs account for the specified junction-to-case resistance values under expected operating conditions.
Selection Notes
Select this component for applications requiring robust 600V switching with integrated freewheeling diode functionality. Consider the 10 µs short circuit tolerance for fault protection schemes. Evaluate thermal performance based on the provided transient thermal impedance curves for the intended duty cycle.
Part Context
This part belongs to Infineon's discrete IGBT portfolio utilizing NPT technology. It is designed as a standalone power switch rather than a module. The PG-TO-220-3-1 package facilitates through-hole mounting for standard industrial power electronics assemblies.
Replacement Considerations
Consult official cross-reference documentation for verified substitutes. Verify pinout compatibility and electrical ratings if considering alternative manufacturers or newer generations from the same supplier.
FAQ
What is the maximum short circuit withstand time?
The device supports a short circuit withstand time of 10 µs when VGE is 15V, VCC is ≤ 600V, and Tj is ≤ 150°C.
Does the SKP04N60 include an integrated diode?
Yes, it features a soft, fast recovery anti-parallel Emitter Controlled Diode.
What packaging does this IGBT use?
It is housed in a PG-TO-220-3-1 package, also known as TO-220AB.
