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The SKP10N60AXKSA1 is a fast IGBT in NPT-technology with a soft, fast recovery anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 600V and a DC collector current of 20A at 25°C. The device operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a saturation voltage of 2.3V at 10A and a short circuit withstand time of 10µs. Power dissipation reaches 92W at 25°C case temperature.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and compliance details. Confirm RoHS status and JEDEC qualification requirements for your target application environment. Ensure thermal management design aligns with the specified junction-to-case thermal resistance values provided in the datasheet.
Select this component for applications requiring robust NPT technology and high short-circuit withstand capability. Consider the integrated diode characteristics for inductive load switching. Evaluate thermal performance based on the specified power dissipation limits and operating temperature ranges to ensure reliable operation under varying load conditions.
This part belongs to the SKx10N60A series from Infineon Technologies, designed specifically for 600V applications. It utilizes Non-Punch Through (NPT) technology to deliver high ruggedness and stable behavior across temperature variations. The series includes variants like the SKW10N60A, offering different packaging options while maintaining identical electrical performance characteristics.
SKW10N60A