SKW25N120FKSA1

SKW25N120FKSA1

  • Description:IGBT NPT 1200V 46A TO247-3
  • Series:-

SKU:8fdb180c299b Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 1200V 46A TO247-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):46 A
  • Current - Collector Pulsed (Icm):84 A
  • Vce(on) (Max) @ Vge, Ic:3.6V @ 15V, 25A
  • Power - Max:313 W
  • Switching Energy:3.7mJ
  • Input Type:Standard
  • Gate Charge:225 nC
  • Td (on/off) @ 25°C:45ns/730ns
  • Test Condition:800V, 25A, 22Ohm, 15V
  • Reverse Recovery Time (trr):90 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3-1
  • Grade:-
  • Qualification:-

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SKW25N120FKSA1

Overview

The SKW25N120 is a fast NPT-technology IGBT with an integrated anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 1200V and a continuous collector current of 25A at 100°C. The device offers a short circuit withstand time of 10µs and operates within a junction temperature range of -55°C to +150°C. Packaged in PG-TO-247-3, it provides reduced turn-off energy compared to previous generations.

Feature Summary

  • NPT technology ensures tight parameter distribution and high ruggedness for parallel switching capability.
  • Integrated soft, fast recovery anti-parallel diode reduces reverse recovery losses.
  • Designed for robust performance in motor controls and inverter applications.

Applications

  • Motor controls
  • Inverters
  • Switching Mode Power Supplies (SMPS)

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before integration. Confirm that the application environment remains within the specified thermal limits and that the package type matches the intended PCB footprint requirements.

Selection Notes

Select this component for designs requiring high ruggedness and stable temperature behavior. Consider the 10µs short circuit withstand time for fault protection strategies. Ensure gate drive voltages align with the specified maximum ratings to maintain optimal switching performance.

Part Context

This part belongs to Infineon's IGBT product line utilizing Non-Punch Through (NPT) technology. It is designed as a replacement or upgrade for older generation devices, offering improved switching characteristics while maintaining compatibility with standard TO-247 mounting solutions.

Replacement Considerations

SKW25N120FKSA1

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