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The SKW25N120 is a fast NPT-technology IGBT with an integrated anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 1200V and a continuous collector current of 25A at 100°C. The device offers a short circuit withstand time of 10µs and operates within a junction temperature range of -55°C to +150°C. Packaged in PG-TO-247-3, it provides reduced turn-off energy compared to previous generations.
Verify the specific datasheet revision against the manufacturer's official documentation before integration. Confirm that the application environment remains within the specified thermal limits and that the package type matches the intended PCB footprint requirements.
Select this component for designs requiring high ruggedness and stable temperature behavior. Consider the 10µs short circuit withstand time for fault protection strategies. Ensure gate drive voltages align with the specified maximum ratings to maintain optimal switching performance.
This part belongs to Infineon's IGBT product line utilizing Non-Punch Through (NPT) technology. It is designed as a replacement or upgrade for older generation devices, offering improved switching characteristics while maintaining compatibility with standard TO-247 mounting solutions.
SKW25N120FKSA1