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The Infineon SMBT3904U E6327 is an NPN silicon switching transistor in a SOT-23 package. It features a collector-emitter voltage of 40 V, a collector current of 200 mA, and a total power dissipation of 330 mW at a case temperature up to 71°C. The device has a transition frequency of 300 MHz and a DC current gain ranging from 40 to 300 depending on the collector current. It operates within a junction temperature range of -65°C to 150°C and complies with RoHS standards.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required packaging format. Ensure compliance with RoHS directives and check for any regional export control classifications before finalizing procurement plans.
Select this component for designs requiring robust NPN switching performance in compact surface-mount layouts. Consider the thermal resistance characteristics when determining heat dissipation requirements. Verify that the operating voltage and current limits align with the circuit specifications to ensure reliable long-term operation.
This part belongs to the SMBT3904 series of NPN silicon switching transistors manufactured by Infineon Technologies. It is designed for general-purpose use and offers high reliability in automotive environments due to its AEC-Q101 qualification. The SOT-23 package provides a small footprint suitable for space-constrained printed circuit board designs.
Consult the official datasheet for complementary PNP types such as the SMBT3906. Verify pinout compatibility and electrical parameter equivalence when considering alternative manufacturers' components for direct replacement scenarios.
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 40 V.
Yes, the SMBT3904 is qualified according to the AEC-Q101 standard.
The transition frequency (fT) is specified as 300 MHz under standard test conditions.