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The SMBT3904DW1T1G is a dual NPN silicon bipolar junction transistor manufactured by onsemi. It is housed in a surface-mount SOT-363 (SC-88) package with six terminals. The device supports a maximum DC collector current of 200 mA and features a collector-emitter voltage rating of 40 V, while the collector-base voltage reaches 60 V. The emitter-base voltage is rated at 6 V. Electrical performance includes a gain-bandwidth product of 300 MHz and a collector-emitter saturation voltage of 300 mV. Power dissipation is limited to 150 mW, with a maximum DC current gain of 300. The component operates within a temperature range of -55°C to +150°C and holds AEC-Q100 qualification.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure that the selected variant matches the required automotive qualification status if deployed in regulated environments. Cross-reference the datasheet revision date to validate thermal resistance values and absolute maximum ratings prior to finalizing procurement orders.
Select this component when a dual NPN configuration is required in a minimal surface-mount footprint. Compare power dissipation limits against single-transistor alternatives like the MMBT3904LT1G if higher thermal capacity is needed. Verify that the 200 mA continuous current rating aligns with circuit load requirements and that the SOT-363 pinout matches the target PCB layout constraints.
This part belongs to the MBT3904DW1 series of small-signal NPN transistors. It serves as a dual-transistor alternative to single units such as the MMBT3904LT1G, offering integrated functionality in a six-pin SC-88 package. The series is designed for general-purpose applications requiring compact packaging and reliable switching performance across industrial and automotive temperature ranges.
The MBT3904DW1T1H is a confirmed substitute within the same family. Single-transistor equivalents include the MMBT3904LT1G and SMMBT3904LT1G, though these require separate pins for each transistor function.