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The SMBT3904SH6327XTSA1 is an NPN silicon switching transistor array manufactured by Infineon Technologies. It features two galvanically isolated transistors housed in a SOT-363 (SOT363) surface-mount package. The device supports a maximum collector-emitter voltage of 40 V and a continuous collector current of 200 mA, with a total power dissipation of 250 mW at a case temperature up to 115°C. Key electrical characteristics include a transition frequency of 300 MHz and a DC current gain ranging from 40 to 300 depending on the operating current. The component is qualified according to AEC-Q101 standards and is RoHS compliant.
Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging details and manufacturing origin. Ensure that the AEC-Q101 qualification status aligns with your project's automotive reliability requirements before finalizing procurement decisions.
Select this component when dual isolated NPN switching capabilities are required in a compact SOT-363 footprint. Consider the 250 mW power dissipation limit and thermal resistance characteristics for proper heat management. Verify that the 40 V collector-emitter voltage rating meets the circuit's maximum operating conditions.
This part belongs to the SMBT3904 series of NPN silicon switching transistors produced by Infineon Technologies. The 'S' designation indicates the dual-transistor configuration with galvanic isolation, distinguishing it from the single-transistor SMBT3904 variant. The series is designed for high-reliability applications including automotive electronics.
Consult the Infineon datasheet for complementary types such as the SMBT3906. Verify pinout compatibility and electrical parameters against alternative dual-isolated NPN arrays if sourcing from other manufacturers.