SMBT3904UPNE6327HTSA1

Overview

The SMBT3904UPNE6327HTSA1 is a single NPN silicon switching transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 40 V and a continuous collector current of 200 mA, dissipating up to 330 mW of power. The device features a high DC current gain ranging from 40 to 300 and a transition frequency of 300 MHz. Packaged in the SOT-23 (PG-SOT23) surface-mount format, it includes an AEC-Q101 qualification for automotive applications.

Feature Summary

• High DC current gain across a wide collector current range
• Low collector-emitter saturation voltage for efficient switching
• Qualified according to AEC-Q101 automotive standards

Applications

• General-purpose switching circuits
• Automotive electronic systems requiring AEC-Q101 compliance
• Driver stages for low-power loads

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the ordering suffix matches the specific package and qualification requirements. Ensure storage conditions comply with moisture sensitivity level specifications to prevent damage during soldering processes.

Selection Notes

Select this component when a single NPN transistor with a 40 V rating and 200 mA capacity is required. Consider the SOT-23 footprint for space-constrained designs. Verify thermal management capabilities against the specified junction-to-solder point thermal resistance values under expected operating conditions.

Part Context

This part belongs to the SMBT3904 series of NPN silicon switching transistors. It serves as a standalone single-transistor variant within the broader family, which also includes complementary PNP types and dual-transistor arrays like the SMBT3904S.

Replacement Considerations

Direct substitutes include other AEC-Q101 qualified NPN transistors in the SOT-23 package with matching 40 V and 200 mA ratings. Verify pinout compatibility and electrical characteristics such as hFE and fT before implementation.