SMBT3906DW1T1G

SMBT3906DW1T1G

$0.24
  • Description:TRANS 2PNP 40V 200MA SC88/SC70
  • Series:-

SKU:f38522a05c4f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP 40V 200MA SC88/SC70
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:150mW
  • Frequency - Transition:250MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

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SMBT3906DW1T1G

Overview

The SMBT3906DW1T1G is a PNP bipolar junction transistor manufactured by onsemi, housed in an SOT-563 surface-mount package. This component integrates three individual PNP transistors within a single compact enclosure to facilitate space-efficient circuit designs. The device features a maximum collector-emitter voltage rating of -40V and a continuous collector current capacity of up to 200mA. It operates with a DC current gain (hFE) ranging from 100 to 300 at a collector current of -10mA. The transistor is designed for general-purpose switching and amplification applications, offering low saturation voltage and high thermal stability suitable for portable electronic devices.

Feature Summary

  • Integrates three independent PNP transistors in a single compact SOT-563 package for board space optimization
  • Provides high current gain characteristics suitable for efficient signal amplification and switching operations
  • Engineered with low saturation voltage to minimize power dissipation during active conduction states

Applications

  • General-purpose switching circuits in consumer electronics
  • Signal amplification stages in audio and RF equipment
  • Driver circuits for LEDs and small loads in portable devices

Procurement Notes

Verify the exact ordering suffix DW1T1G against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the SOT-563 pinout matches the target PCB footprint design before procurement. Check for RoHS compliance markings on the datasheet to meet environmental regulatory requirements for the intended market.

Selection Notes

Select this component when a triple PNP configuration is required in a minimal footprint application. Ensure the operating voltage does not exceed the -40V collector-emitter breakdown limit. Verify that the thermal management strategy accommodates the power dissipation limits specified in the thermal resistance parameters of the SOT-563 package.

Part Context

This part belongs to the SMBT390x series of integrated transistor arrays produced by onsemi. The series typically includes complementary NPN and PNP variants such as the SMBT3904 and SMBT3906. These components are designed to replace discrete transistor arrangements, reducing assembly complexity and improving reliability in mass-produced electronic hardware.

Replacement Considerations

Direct substitutes include other SOT-563 packaged triple PNP transistors with matching electrical ratings. Verify pin compatibility and thermal characteristics before substitution. Cross-reference with equivalent parts from other manufacturers ensuring identical voltage and current specifications.

SMBT3906DW1T1GSMBT3906DW1T1G
$0.24
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