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The SMBTA06UPNE6327HTSA1 is an NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package with three pins. The device supports a maximum continuous DC collector current of 500 mA and a collector-emitter voltage (VCEO) of 80 V. Key electrical parameters include a collector-base voltage (VCBO) of 80 V, an emitter-base voltage (VEBO) of 4 V, and a power dissipation (Pd) of 330 mW. The component features a gain-bandwidth product (fT) of 100 MHz and a collector-emitter saturation voltage of 250 mV. It operates within a temperature range of -65°C to +150°C and holds AEC-Q100 qualification.
Verify the specific suffix UPNE against official Infineon documentation to confirm pinout and tape-and-reel specifications. Confirm AEC-Q100 compliance status directly with the manufacturer or authorized distributors. Ensure the SOT-23-3 footprint matches the target PCB design requirements before procurement.
Select this component when an NPN transistor with 80V VCEO and 500mA Ic capability is required in a compact SOT-23-3 package. Consider the 100MHz fT for moderate-speed switching applications. Verify that the 330mW power dissipation rating suits the thermal constraints of the intended enclosure and ambient conditions.
This part belongs to the SMBTA06 series of small-signal NPN transistors. It shares the core electrical characteristics of the standard SMBTA06 but includes specific manufacturing and packaging identifiers indicated by the suffix. The series is designed for general-purpose use in consumer and automotive electronics requiring reliable low-power switching.
Direct substitutes include other NPN transistors in SOT-23 packages with similar VCEO (80V) and Ic (500mA) ratings. Verify pin compatibility and thermal resistance values when considering alternatives from other manufacturers.