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The SMJ4464-12JDS is a 64K x 4 page mode dynamic random-access memory (DRAM) manufactured by Texas Instruments. It features a maximum access time of 120 ns and utilizes a ceramic dual in-line package with side brazed leads (CDIP-18). The device operates within a military temperature range, typically -55°C to +125°C, and supports RAS-only, CAS-before-RAS, and hidden refresh modes. It has a memory density of 262,144 bits organized as 65,536 words by 4 bits.
Verify the specific suffix JDS confirms the hermetic ceramic DIP-18 package and military grade. Confirm RoHS exemption status as these parts are often lead-based. Ensure the 120 ns speed grade matches system timing requirements. Check for current production status or last-time buy notices due to legacy DRAM technology.
Select this component when hermetic sealing and radiation hardness are critical. Compare access times against system clock speeds. Ensure board layout accommodates the through-hole CDIP-18 footprint. Verify power supply stability for DRAM refresh cycles.
This part belongs to the SMJ series of space-grade and military microelectronics from Texas Instruments. It replaces older standard commercial DRAMs in applications requiring long-term availability and harsh environment tolerance. The page mode feature distinguishes it from standard fast page mode DRAMs used in consumer electronics.
Direct pin-to-pin replacements may be limited. Consider equivalent parts from other manufacturers offering hermetic ceramic DRAMs. Verify that any substitute maintains the same access time and voltage specifications.