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The SMMBF4391LT1G is an N-channel JFET switching transistor manufactured by onsemi. It features a maximum drain-source voltage of 30 Vdc and a total device dissipation of 225 mW at 25°C ambient temperature. The zero-gate-voltage drain current ranges from 50 mA to 150 mA, with a static drain-source on-resistance of up to 30 Ohms. The component operates within a junction and storage temperature range of -55°C to +150°C.
Verify the specific ordering suffix 'S' indicates compliance with AEC-Q101 qualification and PPAP capability requirements. Confirm package details match the SOT-23 (TO-236) outline and ensure environmental declarations align with Pb-Free and Halogen Free specifications during procurement processing.
Select this component when high reliability in automotive environments is required alongside standard JFET switching performance. Ensure the circuit design accommodates the specified 30 Vdc breakdown limits and thermal derating characteristics above 25°C ambient temperature for proper operation.
This part belongs to the MMBF4391L series of N-channel JFETs. It shares electrical characteristics with the MMBF4391LT1G but includes the 'S' prefix designation for specialized automotive supply chain controls. The device utilizes a surface-mount SOT-23 package suitable for automated assembly processes.
MMBF4391LT1G
The 'S' prefix denotes that the device is qualified to AEC-Q101 standards and is PPAP capable, intended for automotive and other applications requiring unique site and control change requirements.
The maximum Drain-Source Voltage (VDS) rating is 30 Vdc.