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Product Detailed Parameters
- Description：JFET P-CH 30V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：11pF @ 10V (VGS)
- Resistance - RDS(On)：125 Ohms
- Power - Max：225 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SMMBFJ175LT1G is a silicon P-Channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a compact SOT-23-3 surface-mount package designed for space-constrained applications. The device features a gate-source breakdown voltage of 30 V and supports a continuous drain current up to 10 mA. With a power dissipation rating of 225 mW, it operates reliably within a temperature range of -55°C to +150°C. This component belongs to the MMBFJ175L series, offering consistent electrical characteristics for analog signal processing tasks.
Feature Summary
- Utilizes a single P-Channel JFET configuration for efficient circuit integration.
- Engineered with a low-profile SOT-23-3 surface-mount package for automated assembly.
- Constructed using silicon technology to ensure stable performance across wide temperature ranges.
Applications
- Analog signal switching and routing
- Low-noise amplifier input stages
- Voltage-controlled resistor circuits
Procurement Notes
Verify the specific suffix LT1G against official onsemi documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with standard SMD reflow profiles. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a P-Channel JFET is required in a small footprint. Compare Idss ranges and Rds(on) values against circuit requirements. Verify that the 30 V breakdown voltage exceeds maximum operating voltages. Consider thermal management capabilities given the 225 mW dissipation limit in enclosed designs.
Part Context
This part is part of onsemi's discrete transistor portfolio, specifically within the JFET category. It shares the MMBFJ175L series designation with related variants. The SMT variant distinguishes itself from through-hole counterparts by enabling high-density PCB layouts. It serves as a specialized active component for precision analog electronics.
Replacement Considerations
Consult official substitution guides for equivalent P-Channel JFETs in SOT-23 packages. Verify pinout compatibility and electrical parameter overlaps before replacing. Check for updated lifecycle notices or obsolescence warnings from the manufacturer.
