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The SMMUN2111LT1G-M01 is a PNP Bias Resistor Transistor (BRT) from onsemi, designed to replace discrete devices and external bias networks. It integrates a single transistor with internal resistors in an SOT-23 package. Key electrical parameters include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a typical input resistance of 10 kOhms and a minimum DC current gain (hfe) of 35. Power dissipation is rated at 246 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific suffix M01 against official manufacturer documentation to confirm its exact functional equivalence or any distinct manufacturing specifications compared to standard variants. Ensure compliance with RoHS directives as indicated by the manufacturer's product classification. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a compact PNP solution with integrated biasing is required to reduce board space and assembly complexity. Consider the 50V voltage rating and 100mA current limit to ensure suitability for the target application's electrical demands. Evaluate the thermal performance within the specified temperature range to guarantee reliable operation under expected load conditions.
This component belongs to the MMUN2111L series of digital transistors manufactured by onsemi. These devices are specifically engineered to consolidate multiple components into a single package, enhancing reliability and reducing footprint in modern electronic designs. The series focuses on providing efficient biasing solutions for small-signal applications.
Public confirmed substitute part numbers are not available in the provided source material.