SMMUN2111LT1G

Overview

The SMMUN2111LT1G is a Bias Resistor Transistor (BRT) featuring an integrated NPN transistor and monolithic bias network within a SOT-23 package. It replaces discrete components with a single device containing a series base resistor (R1) and a base-emitter resistor (R2). Key electrical parameters include a collector-emitter voltage of 50 V, continuous collector current of 100 mA, and power dissipation of 246 mW at 25°C. The typical input resistance R1 is 10 kΩ with a resistor ratio of 1.0. DC current gain (hFE) ranges from 35 to 60 at 5 mA and 10 V.

Feature Summary

• Integrates a single NPN transistor with a monolithic bias network consisting of two resistors to simplify circuit design.
• Reduces board space and component count by eliminating the need for external biasing resistors.

Applications

• General-purpose switching applications
• Driver circuits for logic interfaces
• Replacement for discrete transistor and resistor networks

Procurement Notes

Verify the specific ordering suffix 'LT1G' against the manufacturer's official documentation to confirm the SOT-23 package type and tape-and-reel shipping configuration. Ensure compliance with RoHS standards and Pb-free requirements as specified in the datasheet before finalizing procurement specifications.

Selection Notes

Select this component when a compact solution for NPN switching is required without external biasing resistors. Confirm that the 50 V collector-emitter voltage and 100 mA continuous current ratings meet the application's electrical demands. Verify thermal dissipation capabilities relative to the operating ambient temperature and PCB copper pad area.

Part Context

This part belongs to the MUN2111/DTA114E family of digital transistors published under document DTA114E/D. It shares functional characteristics with other variants in the series, such as MMUN2111L and MUN2111T1G, which utilize different packaging options like SC-59 or SC-70/SOT-323 while maintaining similar electrical performance profiles.

Replacement Considerations

Direct substitutes include MMUN2111LT1G and SMUN2111LT1G, which share identical electrical characteristics and pin configurations within the same SOT-23 package family.

FAQ

What is the internal resistor configuration of the SMMUN2111LT1G?

The device contains a monolithic bias network with a series base resistor (R1) and a base-emitter resistor (R2), both typically valued at 10 kΩ, resulting in a resistor ratio of 1.0.

What are the maximum voltage ratings for the collector-base and collector-emitter terminals?

Both the Collector-Base Voltage (VCBO) and Collector-Emitter Voltage (VCEO) have a maximum rating of 50 Vdc.

Is the SMMUN2111LT1G suitable for automotive applications requiring AEC-Q101 qualification?

No, the standard SMMUN2111LT1G is not explicitly listed as AEC-Q101 qualified in the provided datasheet; only devices with the 'S' or 'NSV' prefix are noted as potentially meeting unique site and control change requirements for automotive applications.