SMMUN2111LT3G

Overview

The SMMUN2111LT3G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration replaces discrete components to reduce board space and system cost. The device features a collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. It operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a typical DC current gain (hFE) of 60 at IC = 5.0 mA and VCE = 10 V, and an input resistor (R1) of 10 kΩ with a resistor ratio (R1/R2) of 1.0.

Feature Summary

• Integrates a PNP transistor with a monolithic bias network containing a series base resistor and a base-emitter resistor.
• Designed to replace individual devices and external resistor bias networks, reducing component count and board space.
• Qualified for automotive applications under AEC-Q101 standards and capable of PPAP requirements.

Applications

• Automotive electronic systems requiring unique site and control change specifications.
• General-purpose switching circuits where simplified design and reduced footprint are prioritized.
• Applications necessitating pre-biased transistors to eliminate external biasing components.

Procurement Notes

Verify the specific ordering suffix 'LT3G' against the manufacturer's current documentation to confirm package type and shipping configuration. Ensure compliance with RoHS and halogen-free requirements if specified for the target application. Confirm that the AEC-Q101 qualification aligns with any automotive reliability standards required by the end product design.

Selection Notes

Select this component when a PNP digital transistor with a 10 kΩ input resistor and unity resistor ratio is required. Consider the SOT-23 package dimensions and thermal dissipation limits relative to the ambient operating conditions. Verify that the 50 V collector-emitter voltage rating meets the circuit's maximum voltage requirements.

Part Context

This part belongs to the MUN2111L series of digital transistors manufactured by onsemi. It shares functional similarities with other BRTs in the family but is distinguished by its specific resistor values and PNP polarity. The 'SMMUN' prefix indicates a specific packaging and marking variation within the broader MMUN2111L product line.

Replacement Considerations

Direct substitutes include MUN2111T1G, SMUN2111T1G, MMUN2111LT1G, and SMUN2111LT3G, which share identical electrical characteristics and pin configurations but may differ in package style or shipping quantity.

FAQ

What is the internal resistor configuration of the SMMUN2111LT3G?

The device contains a monolithic bias network with a series base resistor (R1) of 10 kΩ and a base-emitter resistor (R2), resulting in a resistor ratio (R1/R2) of 1.0.

Is the SMMUN2111LT3G suitable for automotive applications?

Yes, devices with the S and NSV prefixes are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications requiring unique site and control change requirements.

What is the maximum continuous collector current for this device?

The maximum continuous collector current (IC) is rated at 100 mAdc.