SMMUN2113LT1G

SMMUN2113LT1G

$0.14
  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-

SKU:5483780365a3 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:246 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)

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SMMUN2113LT1G

Overview

The SMMUN2113LT1G is a PNP digital transistor from onsemi, housed in a 3-pin SOT-23 surface-mount package. It integrates a single NPN transistor with a typical base resistor of 47 kΩ and a resistance ratio of 1. Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 50 V, a continuous collector current of 100 mA, and a maximum power dissipation of 400 mW. The device features a minimum DC current gain (hFE) of 80 and operates within a temperature range of -55 °C to +150 °C. Its compact dimensions are 3.04 x 1.4 x 1.01 mm.

Feature Summary

  • Integrated PNP digital transistor with built-in base resistor for simplified circuit design
  • High thermal stability with an operating junction temperature up to +150 °C
  • Compact SOT-23 surface-mount package suitable for space-constrained applications

Applications

  • Switching applications in portable electronic devices
  • Logic level translation circuits
  • Driver stages for low-power loads

Procurement Notes

Verify the complete part number including suffixes such as 'T1G' to ensure correct tape-and-reel packaging and RoHS compliance status. Confirm that the supplier provides official datasheets matching the onsemi specification sheet. Check for any specific handling requirements related to electrostatic discharge during storage and assembly processes.

Selection Notes

Select this component when a PNP digital switch with a 47 kΩ base resistor is required. Ensure the circuit voltage does not exceed 50 V and current remains below 100 mA. Consider the SOT-23 footprint constraints and verify thermal management capabilities for power dissipation up to 400 mW in the intended enclosure environment.

Part Context

This component belongs to the 211 series of digital transistors from onsemi. These devices combine a single transistor with internal bias resistors to reduce external component count. The SMMUN2113LT1G specifically utilizes a PNP configuration with a 47 kΩ resistor, distinguishing it from other variants in the series that may offer different resistance values or NPN configurations.

Replacement Considerations

Direct substitutes must match the PNP type, 50 V rating, 100 mA current, and 47 kΩ integrated resistor. Verify pinout compatibility in the SOT-23 package. Cross-reference with other manufacturers' equivalent digital transistor offerings ensuring identical electrical characteristics and thermal performance limits.

SMMUN2113LT1GSMMUN2113LT1G
$0.14
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