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The SMMUN2114LT1G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device features a typical DC current gain of 140 at 5.0 mA and 10 V, with an input resistor R1 of 10 kOhms and a resistor ratio R1/R2 of 0.21. Packaged in a surface-mount SOT-23 case, it functions reliably across a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping quantity. Confirm that the device meets RoHS compliance and halogen-free requirements for your target market regulations. Ensure the application environment remains within the specified thermal dissipation limits provided in the datasheet.
Select this component when a PNP digital transistor with integrated biasing is required for space-constrained designs. Verify that the 50 V collector-emitter breakdown voltage and 100 mA continuous current rating align with the circuit load requirements. Consider the SOT-23 package dimensions for PCB layout compatibility.
This part belongs to the MUN2114L series of digital transistors manufactured by onsemi. It shares functional characteristics with other devices in the DTA114Y family but utilizes a distinct SOT-23 package configuration. The product line focuses on replacing individual transistors and external resistor networks with a single integrated solution.
SMUN2114T1G